Diode, semiconductor device, and mosfet

ABSTRACT

Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.

TECHNICAL FIELD

The present application relates to a diode, a semiconductor device, anda MOSFET.

BACKGROUND ART

A technique for reducing the switching loss by improving reverserecovery characteristics of a PN diode has been developed. JapanesePatent Application Laid-Open No. 2003-163357 discloses an MPS diodewhere a PIN diode is combined with a Schottky barrier diode. In thetechnique disclosed in Japanese Patent Application Laid-Open No.2003-163357, injection of holes into an n⁻ drift region from a p anoderegion is suppressed by reducing the size of the p anode region to areach-through limit, and thus the switching loss is reduced. JapanesePatent Application Laid-Open No. 2000-323488 discloses a PIN diodeprovided with an n barrier region having an n type impurity with higherconcentration than the concentration of an n⁻ drift region between a panode region and the n⁻ drift region. In a technique disclosed inJapanese Patent Application Laid-Open No. 2000-323488, injection ofholes into an n⁻ drift region from a p anode region is suppressed by ann barrier region, and thus the switching loss is reduced.

Even in the technique disclosed in Japanese Patent Application Laid-OpenNo. 2003-163357 or Japanese Patent Application Laid-Open No.2000-323488, despite only a few holes being injected into the n⁻ driftregion from the p anode region, the switching loss occurs. If injectionof holes into the n⁻ drift region is further suppressed, the switchingloss of the diode may be further reduced.

SUMMARY OF INVENTION

The present specification provides a technique for solving the aboveproblems. The present specification discloses a technique capable ofreducing loss at the time of switching in a diode.

A diode disclosed in the present specification includes a cathodeelectrode; a cathode region made of a first conductivity typesemiconductor; a drift region made of a low concentration firstconductivity type semiconductor; an anode region made of a secondconductivity type semiconductor, and an anode electrode made of metal.The diode includes a barrier region formed between the drift region andthe anode region and made of a first conductivity type semiconductorhaving a concentration higher than that of the drift region; and apillar region formed so as to connect the barrier region to the anodeelectrode and made of a first conductivity type semiconductor having aconcentration higher than that of the barrier region. In the diode, thepillar region and the anode electrode are connected through a Schottkyjunction.

In the diode, when a forward bias is applied between the anode electrodeand the cathode electrode, the anode electrode and the pillar region areshort-circuited via the Schottky interface. The pillar region and thebarrier region have substantially the same potential, and thus apotential difference between the barrier region and the anode electrodeis nearly the same as voltage drop at the Schottky interface. Since thevoltage drop at the Schottky interface is sufficiently smaller than abuilt-in voltage of a pn junction between the anode region and thebarrier region, injection of holes into the drift region from the anoderegion is suppressed.

Next, when the voltage between the anode electrode and the cathodeelectrode is changed from the forward bias to a reverse bias, a reversecurrent is restricted by the Schottky interface between the anodeelectrode and the pillar region. In the diode, since injection of holesinto the drift region from the anode region is suppressed when theforward bias is applied, a reverse recovery current is small, andreverse recovery time is short. According to the diode, it is possibleto reduce the switching loss without performing lifetime control of thedrift region.

In addition, in the diode, when the reverse bias is applied between theanode electrode and the cathode electrode, an electric field isdistributed to not only a depletion layer growing from the Schottkyinterface between the pillar region and the anode electrode but also adepletion layer growing from the interface of the pn junction betweenthe anode region and the barrier region. Thereby, an electric fieldapplied to the Schottky interface between the pillar region and theanode electrode is reduced. According to the diode, it is possible toimprove voltage resistance to the reverse bias.

Further, in the diode, the impurity concentration in the pillar regionis higher than the impurity concentration in the barrier region. Withthis configuration, it is possible to decrease a potential differencebetween the barrier region and the anode electrode when the forward biasis applied, without reducing the thickness of the anode region.According to the diode, occurrence of reach-through for the reverse biasis suppressed, and thereby it is possible to reduce the switching losswithout reducing voltage resistance.

The diode preferably further includes an electric field progresspreventing region formed between the barrier region and the drift regionand made of the second conductivity type semiconductor.

In the diode, when a reverse bias is applied between the anode electrodeand the cathode electrode, a reverse current is restricted not only bythe Schottky interface between the pillar region and the anode electrodebut also by a pn junction between the drift region and the electricfield progress preventing region. According to the diode, it is possibleto reduce a leakage current when the reverse bias is applied.

In addition, in the diode, when the reverse bias is applied between theanode electrode and the cathode electrode, an electric field isdistributed to not only a depletion layer growing from the Schottkyinterface between the pillar region and the anode electrode and adepletion layer growing from an interface of the pn junction between theanode region and the barrier region but also an interface of the pnjunction between the drift region and the electric field progresspreventing region. Thereby, an electric field applied to the Schottkyinterface between the pillar region and the anode electrode and anelectric field applied to the pn junction between the anode region andthe barrier region are reduced. According to the diode, it is possibleto further improve voltage resistance to the reverse bias.

In the diode, preferably, a trench extending from the anode region tothe drift region is formed, and a trench electrode which is coated withan insulating film is formed inside the trench.

In the diode, when the reverse bias is applied between the anodeelectrode and the cathode electrode, an electric field is concentratedon a portion around a front end of the trench electrode in the driftregion, thereby reducing an electric field applied to the Schottkyinterface between the pillar region and the anode electrode or theinterface of the pn junction between the anode region and the barrierregion. According to the diode, it is possible to further improvevoltage resistance to the reverse bias.

The diode preferably further includes a cathode short-circuit regionpartially formed in the cathode region and made of the secondconductivity type semiconductor.

In the diode, when a forward bias is applied between the anode electrodeand the cathode electrode, the cathode short-circuit region is formed,and thus injection of electrons into the drift region from the cathoderegion is suppressed. Thereby, a reverse recovery current becomessmaller when the forward bias is changed to the reverse bias, and thusreverse recovery time can be further shortened. According to the diode,it is possible to further reduce the switching loss.

The present specification discloses a semiconductor device in which thediode and an IGBT are integrally formed. In the semiconductor device,the IGBT includes a collector electrode; a collector region made of thesecond conductivity type semiconductor; a second drift regioncontinuously formed from the drift region and made of a lowconcentration first conductivity type semiconductor, a body region madeof the second conductivity type semiconductor, an emitter region made ofthe first conductivity type semiconductor; an emitter electrode made ofmetal; and a gate electrode opposite to the body region between theemitter region and the second drift region via an insulating film. Inaddition, in the semiconductor device, the IGBT includes a secondbarrier region formed between the second drift region and the bodyregion and made of a first conductivity type semiconductor having aconcentration higher than that of the second drift region; and a secondpillar region formed so as to connect the second barrier region to theemitter electrode and made of a first conductivity type semiconductorhaving a concentration higher than that of the second barrier region. Inthe semiconductor device, the second pillar region and the emitterelectrode are connected through a Schottky junction.

In the semiconductor device, it is possible to reduce the switching lossin both the diode and a parasitic diode of the IGBT and to therebyimprove voltage resistance to the reverse bias.

The semiconductor device preferably further includes a second electricfield progress preventing region formed between the second barrierregion and the second drift region and made of the second conductivitytype semiconductor.

In the semiconductor device, it is possible to further improve voltageresistance to the reverse bias in relation to a parasitic diode of theIGBT, and it is possible to reduce a leakage current when the reversebias is applied. In addition, when the IGBT is driven, a current flowingfrom the collector electrode to the emitter electrode is suppressed by apn junction between the electric field progress preventing region andthe drift region, and thus it is possible to reduce a saturation currentof the IGBT.

The present specification discloses a MOSFET. The MOSFET includes adrain electrode; a drain region made of a first conductivity typesemiconductor; a drift region made of a low concentration firstconductivity type semiconductor; a body region made of a secondconductivity type semiconductor, a source region made of the firstconductivity type semiconductor, a source electrode made of metal; agate electrode opposite to the body region between the source region andthe drift region via an insulating film; a barrier region formed betweenthe drift region and the body region and made of a first conductivitytype semiconductor having a concentration higher than that of the driftregion; and a pillar region formed so as to connect the barrier regionto the source electrode and made of a first conductivity typesemiconductor having a concentration higher than that of the barrierregion. In the MOSFET, the pillar region and the source electrode areconnected through a Schottky junction.

According to the MOSFET, it is possible to reduce the switching loss ofa parasitic diode and to improve voltage resistance to the reverse bias.

The MOSFET preferably further includes an electric field progresspreventing region formed between the barrier region and the drift regionand made of the second conductivity type semiconductor.

In the MOSFET, it is possible to further improve voltage resistance tothe reverse bias and to thereby reduce a leakage current when thereverse bias is applied.

Another diode disclosed in the present specification includes a cathodeelectrode; a cathode region made of a first conductivity typesemiconductor; a drift region made of a low concentration firstconductivity type semiconductor; an anode region made of a secondconductivity type semiconductor; and an anode electrode made of metal.The diode includes a barrier region formed between the drift region andthe anode region and made of a first conductivity type semiconductorhaving a concentration higher than that of the drift region; and apillar electrode formed so as to connect the barrier region to the anodeelectrode and made of metal. In the diode, the barrier region and thepillar electrode are connected through a Schottky junction.

In the diode, when a forward bias is applied between the anode electrodeand the cathode electrode, the pillar electrode and the barrier regionare short-circuited via the Schottky interface. At this time, apotential difference between the barrier region and the anode electrodeis nearly the same as voltage drop at the Schottky interface. Since thevoltage drop at the Schottky interface is sufficiently smaller than abuilt-in voltage of a pn junction between the anode region and thebarrier region, injection of holes into the drift region from the anoderegion is suppressed.

Next, when the voltage between the anode electrode and the cathodeelectrode is changed from the forward bias to a reverse bias, a reversecurrent is restricted by the Schottky interface between the pillarelectrode and the barrier region. In the diode, since injection of holesinto the drift region from the anode region is suppressed when theforward bias is applied, a reverse recovery current is small, andreverse recovery time is short. According to the diode, it is possibleto reduce the switching loss without performing lifetime control of thedrift region.

In addition, in the diode, when the reverse bias is applied between theanode electrode and the cathode electrode, an electric field isdistributed to not only a depletion layer growing from the Schottkyinterface between the barrier region and the pillar electrode but also adepletion layer growing from the interface of the pn junction betweenthe anode region and the barrier region. Thereby, an electric fieldapplied to the Schottky interface between the barrier region and thepillar electrode is reduced. According to the diode, it is possible toimprove voltage resistance to the reverse bias.

In addition, in the diode, the pillar electrode is made of metal. Withthis configuration, it is possible to decrease a potential differencebetween the barrier region and the anode electrode when the forward biasis applied, without reducing the thickness of the anode region.According to the diode, occurrence of reach-through for the reverse biasis suppressed, and thereby it is possible to reduce the switching losswithout reducing voltage resistance.

The diode preferably further includes an electric field progresspreventing region formed between the barrier region and the drift regionand made of the second conductivity type semiconductor.

In the diode, when a reverse bias is applied between the anode electrodeand the cathode electrode, a reverse current is restricted not only bythe Schottky interface between the barrier region and the pillarelectrode but also by a pn junction between the drift region and theelectric field progress preventing region. According to the diode, it ispossible to reduce a leakage current when the reverse bias is applied.

In addition, in the diode, when the reverse bias is applied between theanode electrode and the cathode electrode, an electric field isdistributed to not only a depletion layer growing from the Schottkyinterface between the barrier region and the pillar electrode and adepletion layer growing from an interface of the pn junction between theanode region and the barrier region but also an interface of the pnjunction between the drift region and the electric field progresspreventing region. Thereby, an electric field applied to the Schottkyinterface between the barrier region and the pillar electrode and anelectric field applied to the pn junction between the anode region andthe barrier region are reduced. According to the diode, it is possibleto further improve voltage resistance to the reverse bias.

In the diode, preferably, a trench extending from the anode region tothe drift region is formed, and a trench electrode which is coated withan insulating film is formed inside the trench.

In the diode, when the reverse bias is applied between the anodeelectrode and the cathode electrode, an electric field is concentratedon a portion around a front end of the trench electrode in the driftregion, thereby reducing an electric field applied to the Schottkyinterface between the barrier region and the pillar electrode or theinterface of the pn junction between the anode region and the barrierregion. According to the diode, it is possible to further improvevoltage resistance to the reverse bias.

The diode preferably further includes a cathode short-circuit regionpartially formed in the cathode region and made of the secondconductivity type semiconductor.

In the diode, when a forward bias is applied between the anode electrodeand the cathode electrode, the cathode short-circuit region is formed,and thus injection of electrons into the drift region from the cathoderegion is suppressed. Thereby, a reverse recovery current becomessmaller when the forward bias is changed to the reverse bias, and thusreverse recovery time can be further shortened. According to the diode,it is possible to further reduce the switching loss.

The present specification discloses another semiconductor device inwhich the diode and an IGBT are integrally formed. In the semiconductordevice, the IGBT includes a collector electrode; a collector region madeof the second conductivity type semiconductor, a second drift regioncontinuously formed from the drift region and made of a lowconcentration first conductivity type semiconductor; a body region madeof the second conductivity type semiconductor; an emitter region made ofthe first conductivity type semiconductor, an emitter electrode made ofmetal; and a gate electrode opposite to the body region between theemitter region and the second drift region via an insulating film. Inthe semiconductor device, the IGBT includes a second barrier regionformed between the second drift region and the body region and made of afirst conductivity type semiconductor having a concentration higher thanthat of the second drift region; and a second pillar electrode formed soas to connect the second barrier region to the emitter electrode andmade of metal. In the semiconductor device, the second barrier regionand the second pillar electrode are connected through a Schottkyjunction.

In the semiconductor device, it is possible to reduce the switching lossin both the diode and a parasitic diode of the IGBT and to therebyimprove voltage resistance to the reverse bias.

The semiconductor preferably further includes a second electric fieldprogress preventing region formed between the second barrier region andthe second drift region and made of the second conductivity typesemiconductor.

In the semiconductor device, it is possible to further improve voltageresistance to the reverse bias in relation to a parasitic diode of theIGBT, and to reduce a leakage current when the reverse bias is applied.In addition, when the IGBT is driven, a current flowing from thecollector electrode to the emitter electrode is suppressed by a pnjunction between the electric field progress preventing region and thedrift region, and thus it is possible to reduce a saturation current ofthe IGBT.

The present specification discloses a MOSFET. The MOSFET includes adrain electrode; a drain region made of a first conductivity typesemiconductor, a drift region made of a low concentration firstconductivity type semiconductor; a body region made of a secondconductivity type semiconductor; a source region made of the firstconductivity type semiconductor, a source electrode; and a gateelectrode opposite to the body region between the source region and thedrift region via an insulating film. The MOSFET includes a barrierregion formed between the drift region and the body region and made of afirst conductivity type semiconductor having a concentration higher thanthat of the drift region; and a pillar electrode formed so as to connectthe barrier region to the source electrode and made of metal. In theMOSFET, the barrier region and the pillar electrode are connectedthrough a Schottky junction.

According to the MOSFET, it is possible to reduce the switching loss ofa parasitic diode and to improve voltage resistance to the reverse bias.

The MOSFET preferably further includes an electric field progresspreventing region formed between the barrier region and the drift regionand made of the second conductivity type semiconductor.

In the MOSFET, it is possible to further improve voltage resistance tothe reverse bias and to thereby reduce a leakage current when thereverse bias is applied.

According to the technique disclosed in the present specification, it ispossible to reduce loss at the time of switching in a diode.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram schematically illustrating a configuration of adiode 2 according to Embodiment 1;

FIG. 2 is a graph for comparing the reverse recovery characteristics ofthe diode 2 according to Embodiment 1 and a diode 26 according toComparative Example 1;

FIG. 3 is a diagram schematically illustrating a configuration of thediode 26 according to Comparative Example 1;

FIG. 4 is a diagram schematically illustrating a configuration of adiode 32 according to Embodiment 2;

FIG. 5 is a graph for comparing leakage currents when a reverse bias isapplied to the diode 2 according to Embodiment 1 and the diode 32according to Embodiment 2;

FIG. 6 is a graph for comparing voltage resistance when a reverse biasis applied to the diode 2 according to Embodiment 1 and the diode 32according to Embodiment 2;

FIG. 7 is a diagram schematically illustrating a configuration of adiode 42 according to Embodiment 3;

FIG. 8 is a diagram schematically illustrating a configuration of adiode 52 according to Embodiment 4;

FIG. 9 is a diagram schematically illustrating another configuration ofthe diode 52 according to Embodiment 4;

FIG. 10 is a diagram schematically illustrating a configuration of adiode 62 according to Embodiment 5;

FIG. 11 is a diagram schematically illustrating a configuration of adiode 2 according to a modified example of Embodiment 1;

FIG. 12 is a diagram schematically illustrating a configuration of adiode 32 according to a modified example of Embodiment 2;

FIG. 13 is a diagram schematically illustrating a configuration of adiode 42 according to a modified example of Embodiment 3;

FIG. 14 is a diagram schematically illustrating a configuration of asemiconductor device 72 according to Embodiment 6;

FIG. 15 is a diagram schematically illustrating a configuration of asemiconductor device 82 according to Embodiment 7;

FIG. 16 is a diagram schematically illustrating a configuration of asemiconductor device 102 according to Embodiment 8;

FIG. 17 is a diagram schematically illustrating a configuration of asemiconductor device 162 according to Embodiment 9;

FIG. 18 is a diagram schematically illustrating another configuration ofthe semiconductor device 162 according to Embodiment 9;

FIG. 19 is a diagram schematically illustrating a configuration of asemiconductor device 172 according to Embodiment 10;

FIG. 20 is a diagram schematically illustrating a configuration of asemiconductor device 182 according to Embodiment 11;

FIG. 21 is a diagram schematically illustrating a configuration of asemiconductor device 202 according to Embodiment 12;

FIG. 22 is a diagram schematically illustrating a configuration of asemiconductor device 232 according to Embodiment 13;

FIG. 23 is a diagram schematically illustrating a configuration of asemiconductor device 242 according to Embodiment 14;

FIG. 24 is a diagram schematically illustrating a configuration of asemiconductor device 252 according to Embodiment 15;

FIG. 25 is a diagram schematically illustrating a configuration of adiode 302 according to Embodiment 16;

FIG. 26 is a diagram schematically illustrating a configuration of adiode 304 according to Embodiment 17;

FIG. 27 is a diagram schematically illustrating a configuration of adiode 306 according to another Embodiment;

FIG. 28 is a diagram schematically illustrating a configuration of adiode 308 according to another Embodiment;

FIG. 29 is a diagram schematically illustrating a configuration of adiode 310 according to another Embodiment;

FIG. 30 is a diagram schematically illustrating a configuration of adiode 312 according to another Embodiment;

FIG. 31 is a diagram schematically illustrating a configuration of adiode 314 according to another Embodiment;

FIG. 32 is a diagram schematically illustrating a configuration of adiode 316 according to another Embodiment;

FIG. 33 is a diagram schematically illustrating a configuration of asemiconductor device 318 according to another Embodiment;

FIG. 34 is a diagram schematically illustrating a configuration of asemiconductor device 320 according to another Embodiment;

FIG. 35 is a diagram schematically illustrating a configuration of asemiconductor device 322 according to another Embodiment;

FIG. 36 is a diagram schematically illustrating a configuration of asemiconductor device 324 according to another Embodiment;

FIG. 37 is a diagram schematically illustrating a configuration of asemiconductor device 326 according to another Embodiment;

FIG. 38 is a diagram schematically illustrating a configuration of asemiconductor device 328 according to another Embodiment;

FIG. 39 is a diagram schematically illustrating a configuration of asemiconductor device 330 according to another Embodiment;

FIG. 40 is a diagram schematically illustrating a configuration of asemiconductor device 332 according to another Embodiment;

FIG. 41 is a diagram schematically illustrating a configuration of asemiconductor device 334 according to another Embodiment;

FIG. 42 is a diagram schematically illustrating a configuration of asemiconductor device 336 according to another Embodiment;

FIG. 43 is a diagram schematically illustrating another configuration ofthe semiconductor device 102 according to Embodiment 8;

FIG. 44 is a diagram schematically illustrating another configuration ofthe semiconductor device 162 according to Embodiment 9;

FIG. 45 is a diagram schematically illustrating another configuration ofthe semiconductor device 322 according to another Embodiment;

FIG. 46 is a diagram schematically illustrating another configuration ofthe semiconductor device 324 according to another Embodiment; and

FIG. 47 is a diagram schematically illustrating another configuration ofthe semiconductor device 162 according to Embodiment 9.

FIG. 48 is a diagram schematically illustrating another configuration ofthe semiconductor device 162 according to Embodiment 9.

FIG. 49 is a diagram schematically illustrating another configuration ofthe semiconductor device 162 according to Embodiment 9.

FIG. 50 is a diagram schematically illustrating another configuration ofthe semiconductor device 162 according to Embodiment 9.

DESCRIPTION OF EMBODIMENTS Embodiment 1

As shown in FIG. 1, a diode 2 in this Embodiment is formed using asemiconductor substrate 4 of silicon. An n⁺ cathode region 6 which is ahigh concentration n type semiconductor region, an n buffer region 8which is an n type semiconductor region, an n⁻ drift region 10 which isa low concentration n type semiconductor region, an n barrier region 12which is an n type semiconductor region, and p anode regions 14 whichare p type semiconductor regions are sequentially laminated on thesemiconductor substrate 4. In this Embodiment, for example, phosphorousis added in the n type semiconductor region as an impurity, and, forexample, boron is added in the p type semiconductor region as animpurity. In this Embodiment, an impurity concentration of the n⁺cathode region 6 is approximately 1×10¹⁷ to 5×10²⁰ [cm⁻³], the impurityconcentration of the n buffer region 8 is approximately 1×10¹⁶ to 1×10¹⁹[cm⁻³], the impurity concentration of the n⁻ drift region 10 isapproximately 1×10¹² to 1×10¹⁵ [cm⁻³], the impurity concentration of then barrier region 12 is 1×10⁵ to 1×10¹⁸ [cm⁻¹], and the impurityconcentration of the p anode regions 14 is approximately 1×10¹⁶ to1×10¹⁹ [cm⁻³]. In addition, a thickness of the n barrier region 12 isapproximately 0.5 to 3.0 [um].

On an upper surface of the semiconductor substrate 4, a plurality of npillar regions 16 which are n type semiconductor regions is formedspaced apart from each other with a predetermined gap. The impurityconcentration of the n pillar regions 16 is approximately 1×10¹⁶ to1×10¹⁹ [cm⁻³]. The n pillar regions 16 are formed so as to penetratethrough the p anode regions 14 and reach an upper surface of the nbarrier region 12. In addition, a plurality of p⁺ contact regions 18which are high concentration p type semiconductor regions is formedspaced apart from each other with a predetermined gap on an uppersurface of the p anode regions 14. The impurity concentration of the p⁺contact regions 18 is approximately 1×10¹⁷ to 1×10²⁰ [cm⁻³]. The p anoderegions 14, the n pillar regions 16, and the p⁺ contact regions 18 areexposed on the upper surface of the semiconductor substrate 4.

A cathode electrode 20 made of metal is formed on a lower surface of thesemiconductor substrate 4. The cathode electrode 20 is connected to then⁺ cathode region 6 through an ohmic junction. An anode electrode 22made of metal is formed on the upper surface of the semiconductorsubstrate 4. The anode electrode 22 is connected to the n pillar regions16 through Schottky junctions via Schottky interfaces 24. In thisEmbodiment, a barrier height of the Schottky junction is approximately0.2 to 1.0 [eV]. The anode electrode 22 is connected to the p anoderegions 14 and the p⁺ contact regions 18 through ohmic junctions.

An operation of the diode 2 will be described. When a forward bias isapplied between the anode electrode 22 and the cathode electrode 20, theanode electrode 22 and the n pillar regions 16 are short-circuited viathe Schottky interfaces 24. The n pillar regions 16 and the n barrierregion 12 have almost the same potential, and thus a potentialdifference between the n barrier region 12 and the anode electrode 22 isnearly the same as voltage drop at the Schottky interfaces 24. Since thevoltage drop at the Schottky interfaces 24 is sufficiently smaller thana built-in voltage of a pn junction between the p anode regions 14 andthe n barrier region 12, injection of holes into the n⁻ drift region 10from the p⁺ contact regions 18 or the p anode regions 14 is suppressed.Between the anode electrode 22 and the cathode electrode 20, a forwardcurrent mainly flows via the Schottky interfaces 24 between the anodeelectrode 22 and the n pillar regions 16, the n pillar regions 16, the nbarrier region 12, the n⁻ drift region 10, the n buffer region 8, andthe n⁺ cathode region 6 in this order.

Next, when the voltage between the anode electrode 22 and the cathodeelectrode 20 is changed from the forward bias to a reverse bias, areverse current is restricted by the Schottky interfaces 24 between theanode electrode 22 and the n pillar regions 16. As described above, inthe diode 2 according to this Embodiment, since the injection of holesinto the n⁻ drift region 10 from the p⁺ contact regions 18 and the panode regions 14 is suppressed when the forward bias is applied, areverse recovery current is small, and reverse recovery time is short.According to the diode 2 of this Embodiment, it is possible to reducethe switching loss without performing lifetime control of the n⁻ driftregion 10.

In the diode 2 of this Embodiment, when the reverse bias is appliedbetween the anode electrode 22 and the cathode electrode 20, an electricfield is distributed to not only depletion layers growing from theSchottky interfaces 24 between the n pillar regions 16 and the anodeelectrode 22 but also depletion layers growing from the interfaces ofthe pn junctions between the p anode regions 14 and the n barrier region12. Thereby, an electric field applied to the Schottky interfaces 24between the n pillar regions 16 and the anode electrode 22 is reduced.According to the diode 2 of this Embodiment, it is possible to improvevoltage resistance to the reverse bias.

FIG. 2 shows a comparison of the reverse recovery characteristics of thediode 2 according to Embodiment 1 and a diode 26 of Comparative Example1 in the related art.

FIG. 3 shows a structure of the diode 26 according to ComparativeExample 1. The diode 26 is formed on a semiconductor substrate 28 ofsilicon on which an n⁺ cathode region 6 which is a high concentration ntype semiconductor region, an n buffer region 8 which is an n typesemiconductor region, and an n⁻ drift region 10 which is a lowconcentration n type semiconductor region are sequentially laminated. Ona surface of the n⁻ drift region 10, a plurality of p anode regions 14which are p type semiconductor regions is formed spaced apart from eachother with a predetermined gap. In addition, a plurality of p contactregions 18 which are high concentration p type semiconductor regions isformed spaced apart from each other with a predetermined gap on an uppersurface of the p anode regions 14. A cathode electrode 20 made of metalis formed on a lower surface of the semiconductor substrate 28. Thecathode electrode 20 is connected to the n⁺ cathode region 6 through anohmic junction. An anode electrode 22 made of metal is formed on theupper surface of the semiconductor substrate 28. The anode electrode 22is connected to the n⁻ drift region 10 through Schottky junctions viaSchottky interfaces 30. The anode electrode 22 is connected to the panode regions 14 and the p⁺ contact regions 18 through ohmic junctions.In other words, the diode 26 according to Comparative Example 1 isdifferent from the diode 2 according to Embodiment 1 in that the nbarrier region 12 and the n pillar regions 16 are not provided.

As is clear from FIG. 2, the diode 2 according to Embodiment 1 has asmaller reverse recovery current and shorter reverse recovery time thanthe diode 26 according to Comparative Example 1. According to the diode2 of this Embodiment, it is possible to reduce the switching loss.

In the diode 2 of this Embodiment, the impurity concentration in the npillar regions 16 is higher than the impurity concentration in the nbarrier region 12. With this configuration, it is possible to decrease apotential difference between the n barrier region 12 and the anodeelectrode 22 when the forward bias is applied, without reducing thethickness of the p anode region 14. According to the diode 2 of thisEmbodiment, occurrence of reach-through for the reverse bias issuppressed, and thereby it is possible to reduce the switching losswithout reducing voltage resistance.

Embodiment 2

As shown in FIG. 4, a diode 32 in this Embodiment is formed using asemiconductor substrate 34 of silicon. On the semiconductor substrate34, an n⁺ cathode region 6 which is a high concentration n typesemiconductor region, an n buffer region 8 which is an n typesemiconductor region, an n⁻ drift region 10 which is a low concentrationn type semiconductor region, a p electric field progress preventingregion 36 which is a p type semiconductor region, an n barrier region 12which is an n type semiconductor region, and p anode regions 14 whichare p type semiconductor regions are sequentially laminated. In thisEmbodiment, the impurity concentration of the p electric field progresspreventing region 36 is approximately 1×10¹⁵ to 1×10¹⁹ [cm⁻³]. Further,the thickness of the p electric field progress preventing region 36 isapproximately 0.5 to 3.0 [um].

On an upper surface of the semiconductor substrate 34, a plurality of npillar regions 16 which are n type semiconductor regions is formedspaced apart from each other with a predetermined gap. The n pillarregions 16 are formed so as to penetrate through the p anode regions 14and reach an upper surface of the n barrier region 12. In addition, aplurality of p⁺ contact regions 18 which are high concentration p typesemiconductor regions is formed spaced apart from each other with apredetermined gap on an upper surface of the p anode regions 14. The panode regions 14, the n pillar regions 16, and the p⁺ contact regions 18are exposed on the upper surface of the semiconductor substrate 34.

A cathode electrode 20 made of metal is formed on a lower surface of thesemiconductor substrate 34. The cathode electrode 20 is connected to then⁺ cathode region 6 through an ohmic junction. An anode electrode 22made of metal is formed on the upper surface of the semiconductorsubstrate 34. The anode electrode 22 is connected to the n pillarregions 16 through Schottky junctions via Schottky interfaces 24. Theanode electrode 22 is connected to the p anode regions 14 and the p⁺contact regions 18 through ohmic junctions.

An operation of the diode 32 will be described. When a forward bias isapplied between the anode electrode 22 and the cathode electrode 20, theanode electrode 22 and the n pillar regions 16 are short-circuited viathe Schottky interfaces 24. The n pillar regions 16 and the n barrierregion 12 have almost the same potential, and thus a potentialdifference between the n barrier region 12 and the anode electrode 22 isnearly the same as voltage drop at the Schottky interfaces 24. Since thevoltage drop at the Schottky interfaces 24 is sufficiently smaller thana built-in voltage of a pn junction between the p anode regions 14 andthe n barrier region 12, injection of holes into the n⁻ drift region 10from the p⁺ contact regions 18 or the p anode regions 14 is suppressed.Between the anode electrode 22 and the cathode electrode 20, a forwardcurrent mainly flows via the Schottky interfaces 24 between the anodeelectrode 22 and the n pillar regions 16, the n pillar regions 16, the nbarrier region 12, the p electric field progress preventing region 36,the n⁻ drift region 10, the n buffer region 8, and the n⁺ cathode region6 in this order. In addition, although there is a pn junction betweenthe n barrier region 12 and the p electric field progress preventingregion 36, since a p type impurity concentration of the p electric fieldprogress preventing region 36 is low and the thickness of the p electricfield progress preventing region 36 is small, the pn junction has lessinfluence on a forward current between the anode electrode 22 and thecathode electrode 20.

Next, when the voltage between the anode electrode 22 and the cathodeelectrode 20 is changed from a forward bias to a reverse bias, a reversecurrent is restricted by the Schottky interfaces 24 between the anodeelectrode 22 and the n pillar regions 16. In addition, the reversecurrent is also restricted by a pn junction between the n⁻ drift region10 and the p⁺ electric field progress preventing region 36. As describedabove, in the diode 32 according to this Embodiment, since injection ofholes into the n⁻ drift region 10 from the p⁺ contact regions 18 and thep anode regions 14 is suppressed when the forward bias is applied, areverse recovery current is small, and reverse recovery time is short.According to the diode 32 of this Embodiment, it is possible to reducethe switching loss without performing lifetime control of the n⁻ driftregion 10.

In the diode 32 of this Embodiment, when the reverse bias is appliedbetween the anode electrode 22 and the cathode electrode 20, an electricfield is distributed to not only depletion layers growing from theSchottky interfaces 24 between the n pillar regions 16 and the anodeelectrode 22 but also depletion layers growing from the interfaces ofthe pn junctions between the p anode regions 14 and the n barrier region12 and an interface of the pn junction between the n⁻ drift region 10and the p electric field progress preventing region 36. Thereby, anelectric field applied to the Schottky interfaces 24 between the npillar regions 16 and the anode electrode 22 and an electric fieldapplied to the pn junction between the p anode regions 14 and the nbarrier region 12 are reduced. According to the diode 32 of thisEmbodiment, it is possible to improve voltage resistance to the reversebias.

FIG. 5 shows a comparison of leakage currents when the reverse bias isapplied to the diode 2 according to Embodiment 1 and the diode 32according to Embodiment 2. As is clear from FIG. 5, leakage currentswhen the reverse bias is applied are reduced more in the diode 32according to Embodiment 2 than in the diode 2 according to Embodiment 1.

FIG. 6 shows a comparison of voltage resistance when the reverse bias isapplied to the diode 2 according to Embodiment 1 and the diode 32according to Embodiment 2. As is clear from FIG. 6, voltage resistancewhen the reverse bias is applied is improved more in the diode 32according to Embodiment 2 than in the diode 2 according to Embodiment 1.

Embodiment 3

As shown in FIG. 7, a diode 42 in this Embodiment is formed using asemiconductor substrate 4 of silicon in the same manner as the diode 2according to Embodiment 1. On the semiconductor substrate 4, an n⁺cathode region 6 which is a high concentration n type semiconductorregion, an n buffer region 8 which is an n type semiconductor region, ann⁻ drift region 10 which is a low concentration n type semiconductorregion, an n barrier region 12 which is an n type semiconductor region,and p anode regions 14 which are p type semiconductor regions aresequentially laminated. On an upper surface of the semiconductorsubstrate 4, a plurality of n pillar regions 16 which are n typesemiconductor regions is formed spaced apart from each other with apredetermined gap. The n pillar regions 16 are formed so as to penetratethrough the p anode regions 14 and reach an upper surface of the nbarrier region 12. In addition, a plurality of trenches 44 is formedwith a predetermined gap on the upper side of the semiconductorsubstrate 4. Each of the trenches 44 penetrates through the n barrierregion 12 from the upper surface of the p anode regions 14 and reachesthe inside of the n⁻ drift region 10. The inside of each of the trenches44 is filled with a trench electrode 48 coated with an insulating film46. In addition, a plurality of p⁺ contact regions 18 which are highconcentration p type semiconductor regions is formed spaced apart fromeach other with a predetermined gap on an upper surface of the p anoderegions 14.

A cathode electrode 20 made of metal is formed on a lower surface of thesemiconductor substrate 4. The cathode electrode 20 is connected to then⁺ cathode region 6 through an ohmic junction. An anode electrode 22made of metal is formed on the upper surface of the semiconductorsubstrate 4. The anode electrode 22 is connected to the n pillar regions16 through Schottky junctions via Schottky interfaces 24. The anodeelectrode 22 is connected to the p anode regions 14 and the p⁺ contactregions 18 through ohmic junctions.

An operation of the diode 42 of this Embodiment is almost the same asthe operation of the diode 2 of Embodiment 1. In the diode 42 accordingto this Embodiment, when a reverse bias is applied between the anodeelectrode 22 and the cathode electrode 20, a voltage applied to thetrench electrodes 48 is adjusted, thereby improving voltage resistance.For example, if a voltage applied to the trench electrodes 48 areadjusted such that the trench electrodes 48 have almost the samepotential as the anode electrode 22 when the reverse bias is applied, anelectric field is concentrated on portions around front ends of thetrench electrodes 48 in the n⁻ drift region 10, and thereby an electricfield applied to the Schottky interfaces 24 between the n pillar regions16 and the anode electrode 22 or interfaces of pn junction between the panode regions 14 and the n barrier region 12 is reduced. In addition, apotential of the trench electrodes 48 is not necessarily the same asthat of the anode electrode 22. When the reverse bias is applied, apotential of the trench electrodes 48 is made to be lower than apotential of the cathode electrode 20 such that an electric field isconcentrated on portions around the front ends of the trench electrodes48, thereby reducing an electric field applied to the Schottkyinterfaces 24 between the n pillar regions 16 and the anode electrode 22or the interfaces of the pn junctions between the p anode regions 14 andthe n barrier region 12. According to the diode 42 of this Embodiment,it is possible to improve voltage resistance to the reverse bias.

Embodiment 4

As shown in FIG. 8, a diode 52 according to this Embodiment is formedusing the semiconductor substrate 34 of silicon in the same manner asthe diode 32 of Embodiment 2. On the semiconductor substrate 34, an n⁺cathode region 6 which is a high concentration n type semiconductorregion, an n buffer region 8 which is an n type semiconductor region, ann⁻ drift region 10 which is a low concentration n type semiconductorregion, a p electric field progress preventing region 36 which is a ptype semiconductor region, an n barrier region 12 which is an n typesemiconductor region, and p anode regions 14 which are p typesemiconductor regions are sequentially laminated. On an upper surface ofthe semiconductor substrate 34, a plurality of n pillar regions 16 whichare n type semiconductor regions is formed spaced apart from each otherwith a predetermined gap. The n pillar regions 16 are formed so as topenetrate through the p anode regions 14 and reach an upper surface ofthe n barrier region 12. In addition, a plurality of trenches 44 isformed with a predetermined gap on the upper side of the semiconductorsubstrate 34. Each of the trenches 44 penetrates through the n barrierregion 12 and the p electric field progress preventing region 36 fromthe upper surface of the p anode regions 14 and reaches the inside ofthe n⁻ drift region 10. The inside of each of the trenches 44 is filledwith a trench electrode 48 coated with an insulating film 46. Inaddition, a plurality of p⁺ contact regions 18 which are highconcentration p type semiconductor regions is formed spaced apart fromeach other with a predetermined gap on an upper surface of the p anoderegions 14.

A cathode electrode 20 made of metal is formed on a lower surface of thesemiconductor substrate 34. The cathode electrode 20 is connected to then⁺ cathode region 6 through an ohmic junction. An anode electrode 22made of metal is formed on the upper surface of the semiconductorsubstrate 34. The anode electrode 22 is connected to the n pillarregions 16 through Schottky junctions via Schottky interfaces 24. Theanode electrode 22 is connected to the p anode regions 14 and the p⁺contact regions 18 through ohmic junctions.

An operation of the diode 52 of this Embodiment is almost the same asthe operation of the diode 32 of Embodiment 2. In the diode 52 accordingto this Embodiment, in the same manner as the diode 42 according toEmbodiment 3, when a reverse bias is applied between the anode electrode22 and the cathode electrode 20, a voltage applied to the trenchelectrodes 48 is adjusted, thereby improving voltage resistance. Forexample, if a voltage applied to the trench electrodes 48 are adjustedsuch that the trench electrodes 48 have almost the same potential as theanode electrode 22 when the reverse bias is applied, an electric fieldis concentrated on portions around front ends of the trench electrodes48 in the n⁻ drift region 10, and thereby an electric field applied tothe Schottky interfaces 24 between the n pillar regions 16 and the anodeelectrode 22, interfaces of pn junction between the p anode regions 14and the n barrier region 12, or an interface of pn junction between then⁻ drift region 10 and the p electric field progress preventing region36 is reduced. According to the diode 52 of this Embodiment, it ispossible to improve voltage resistance to the reverse bias.

In addition, the respective constituent elements of the diode 52 of thisEmbodiment may be disposed in a three-dimensional manner as shown inFIG. 9. In FIG. 9, the cathode electrode 20 and the anode electrode 22are not shown in order to clarify the disposition of the respectiveconstituent elements.

Embodiment 5

As shown in FIG. 10, a diode 62 of this Embodiment has almost the sameconfiguration as that of the diode 52 of Embodiment 4. The diode 62 ofthis Embodiment is different from the diode 52 of Embodiment 4 in that aplurality of p⁺ cathode short-circuit regions 64 which are highconcentration p type semiconductor regions is formed spaced apart fromeach other with a predetermined gap in the n⁺ cathode region 6. In thisEmbodiment, the impurity concentration of the p⁺ cathode short-circuitregions 64 is approximately 1×10¹⁷ to 5×10²⁰ [cm⁻³].

An operation of the diode 62 of this Embodiment is almost the same asthat of the diode 52 of Embodiment 4. In the diode 62 of thisEmbodiment, when a forward bias is applied between the anode electrode22 and the cathode electrode 20, the p⁺ cathode short-circuit regions 64are formed, and thus injection of electrons into the n⁻ drift region 10from the n⁺ cathode region 6 is suppressed. According to the diode 62 ofthis Embodiment, when the forward bias is applied, since not onlyinjection of holes into the n⁻ drift region 10 from the p contactregions 18 and the p anode regions 14 is suppressed, but also injectionof electrons into the n⁻ drift region 10 from the n⁺ cathode region 6 issuppressed, a reverse recovery current becomes smaller, and reverserecovery time can be further shortened. According to the diode 62 ofthis Embodiment, it is possible to further reduce the switching loss.

In addition, the improvement in the reverse recovery characteristicsachieved by providing the p⁺ cathode short-circuit regions 64 asdescribed above is also effective with diodes in other embodiments. Inother words, as in a diode 66 shown in FIG. 11, in the diode 2 ofEmbodiment 1, the p⁺ cathode short-circuit regions 64 may be provided inthe n⁺ cathode region 6. As in a diode 68 shown in FIG. 12, in the diode32 of Embodiment 2, the p⁺ cathode short-circuit regions 64 may beprovided in the n⁺ cathode region 6, and, as in a diode 70 shown in FIG.13, in the diode 42 of this Embodiment 3, the p⁺ cathode short-circuitregions 64 may be provided in the n⁺ cathode region 6.

Embodiment 6

As shown in FIG. 14, a semiconductor device 72 of this Embodiment hasalmost the same configuration as that of the diode 42 of Embodiment 3.In the semiconductor device 72, n⁺ emitter regions 74 which are highconcentration n type semiconductor regions are formed at portionsadjacent to the trenches 44 in the upper surface of the p anode regions14. In this Embodiment, the impurity concentration of the n⁺ emitterregions 74 is approximately 1×10¹⁷ to 5×10²⁰ [cm⁻³]. The n⁺ emitterregions 74 are connected to the anode electrode 22 through ohmicjunctions.

The semiconductor device 72 according to this Embodiment has a verticalMOSFET structure which includes the cathode electrode 20 correspondingto a drain electrode, the n⁺ cathode region 6 corresponding to a drainregion, the n buffer region 8, the n⁻ drift region 10, the p anoderegions 14 corresponding to a body region, the n⁺ emitter regions 74corresponding to a source region, the anode electrode 22 correspondingto a source electrode, and the trench electrodes 48, corresponding to agate electrode, opposite to the p anode regions 14 between the n⁺emitter regions 74 and the n⁻ drift region 10 with the insulating films46 interposed therebetween.

In the same manner as the diode 42 of Embodiment 3, according to thesemiconductor device 72 of this Embodiment, the switching loss can bereduced by improving reverse recovery characteristics of a parasiticdiode of the MOSFET. In addition, in the same manner as the diode 42 ofEmbodiment 3, according to the semiconductor device 72 of thisEmbodiment, it is possible to improve voltage resistance to the reversebias.

Embodiment 7

As shown in FIG. 15, a semiconductor device 82 of this Embodiment hasalmost the same configuration as that of the diode 52 of Embodiment 4.In the semiconductor device 82, n⁺ emitter regions 74 are formed atportions adjacent to the trenches 44 in the upper surface of the p anoderegions 14. The n⁺ emitter regions 74 are connected to the anodeelectrode 22 through ohmic junctions.

The semiconductor device 82 according to this Embodiment has a verticalMOSFET structure which includes the cathode electrode 20 correspondingto a drain electrode, the n⁺ cathode region 6 corresponding to a drainregion, the n buffer region 8, the n⁻ drift region 10, the p anoderegions 14 corresponding to a body region, the n⁺ emitter regions 74corresponding to a source region, the anode electrode 22 correspondingto a source electrode, and the trench electrodes 48, corresponding to agate electrode, opposite to the p anode regions 14 between the n⁺emitter regions 74 and the n⁻ drift region 10 with the insulating films46 interposed therebetween.

In the same manner as the diode 52 of Embodiment 4, according to thesemiconductor device 82 of this Embodiment, the switching loss can bereduced by improving reverse recovery characteristics of a parasiticdiode of the MOSFET. In addition, in the same manner as the diode 52 ofEmbodiment 4, according to the semiconductor device 82 of thisEmbodiment, it is possible to improve voltage resistance to the reversebias and to thereby suppress a leakage current when the reverse bias isapplied.

Embodiment 8

As shown in FIG. 16, a semiconductor device 102 of this Embodiment isformed using a semiconductor substrate 104 of silicon. The semiconductordevice 102 includes an IGBT region 106 and a diode region 108. In theIGBT region 106, on the semiconductor substrate 104, a p⁺ collectorregion 110 which is a high concentration p type semiconductor region, ann buffer region 112 which is an n type semiconductor region, an n⁻ driftregion 114 which is a low concentration n type semiconductor region, nbarrier regions 116 which are n type semiconductor regions, and p bodyregions 118 which are p type semiconductor regions are sequentiallylaminated. In this Embodiment, the impurity concentration of the pcollector region 110 is approximately 1×10¹⁷ to 5×10²⁰ [cm⁻³], theimpurity concentration of the n buffer region 112 is approximately1×10¹⁶ to 1×10¹⁹ [cm⁻³], the impurity concentration of the n⁻ driftregion 114 is approximately 1×10¹² to 1×10¹⁵ [cm⁻³], the impurityconcentration of the n barrier regions 116 is approximately 1×10¹⁵ to1×10¹⁸ [cm⁻³], and the impurity concentration of the p body regions 118is approximately 1×10¹⁶ to 1×10¹⁹ [cm⁻³]. In addition, the thickness ofthe n barrier region 116 is approximately 0.5 to 3.0 [um]. In the dioderegion 108, on the semiconductor substrate 104, an n⁺ cathode region 120which is a high concentration n type semiconductor region, the n bufferregion 112, the n⁻ drift region 114, n barrier regions 122, and p anoderegions 124 which are p type semiconductor regions are sequentiallylaminated. In this Embodiment, the impurity concentration of the n⁺cathode region 120 is approximately 1×10¹⁷ to 5×10²⁰ [cm⁻³], theimpurity concentration of the n barrier regions 122 is approximately1×10¹⁵ to 1×10¹⁸ [cm⁻³], and the impurity concentration of the p anoderegions 124 is approximately 1×10¹⁶ to 1×10¹⁹ [cm⁻³]. In addition, thethickness of the n barrier region 122 is approximately 0.5 to 3.0 [um].A plurality of trenches 126 is formed with a predetermined gap on theupper side of the semiconductor device 104.

In the IGBT region 106, the trenches 126 penetrate through the n barrierregions 116 from the upper surface of the p body regions 118 and reachthe inside of the n⁻ drift region 114. The inside of each of thetrenches 126 is filled with a gate electrode 130 coated with aninsulating film 128. On the upper surfaces of the p body regions 118, n⁺emitter regions 132 which are high concentration n type semiconductorregions are formed at portions adjacent to the trenches 126. Theimpurity concentration of the n⁺ emitter regions 132 is approximately1×10¹ to 5×10²⁰ [cm⁻³]. An n pillar region 134 which is an n typesemiconductor region is formed on the upper surfaces of the p bodyregions 118. The impurity concentration of the n pillar region 134 isapproximately 1×10¹⁶ to 1×10¹⁹ [cm⁻³]. The n pillar region 134 is formedso as to penetrate through the p body regions 118 and reach the uppersurface of the n barrier region 116. In addition, p⁺ contact regions 136which are high concentration p type semiconductor region are formed onthe upper surfaces of the p body regions 118. The impurity concentrationof the p⁺ contact regions 136 is approximately 1×10¹⁷ to 1×10²⁰ [cm⁻³].

In the diode region 108, the trenches 126 penetrates through the nbarrier regions 122 from the upper surface of the p anode regions 124and reaches the inside of the n⁻ drift region 114. The inside of each ofthe trenches 126 is filled with a gate electrode 140 coated with aninsulating film 138. An n pillar region 142 which is an n typesemiconductor region is formed on the upper surfaces of the p anoderegions 124. The impurity concentration of the n pillar region 142 isapproximately 1×10¹⁶ to 1×10¹⁹ [cm⁻³]. The n pillar region 142 is formedso as to penetrate through the p anode regions 124 and reach the uppersurface of the n barrier region 122. In addition, p⁺ contact regions 144which are high concentration p type semiconductor region are formed onthe upper surfaces of the p anode regions 124. The impurityconcentration of the p⁺ contact regions 144 is approximately 1×10¹⁷ to1×10²⁰ [cm⁻³].

On the lower surface of the semiconductor substrate 104, acollector/cathode electrode 146 made of metal is formed. Thecollector/cathode electrode 146 is connected to the p⁺ collector region110 and the n⁺ cathode region 120 through ohmic junctions. Thecollector/cathode electrode 146 functions as a collector electrode inthe IGBT region 106, and functions as a cathode electrode in the dioderegion 108.

On the upper surface of the semiconductor substrate 104, anemitter/anode electrode 148 made of metal is formed. The emitter/anodeelectrode 148 is connected to the n pillar region 134 through a Schottkyjunction via a Schottky interface 150, and connected to the n pillarregion 142 through a Schottky junction via a Schottky interface 152. Inthis Embodiment, the barrier height of each of the Schottky interface150 and the Schottky interface 152 is 0.2 to 1.0 [eV]. In addition, theemitter/anode electrode 148 is connected to the n⁺ emitter regions 132and the p⁺ contact regions 136 of the IGBT region 106 and the p⁺ contactregions 144 of the diode region 108 through ohmic junctions. Theemitter/anode electrode 148 functions as an emitter electrode in theIGBT region 106, and functions as an anode electrode in the diode region108.

The gate electrode 130 of the IGBT region 106 is electrically connectedto a first gate electrode terminal (not shown). The gate electrode 140of the diode region 108 is electrically connected to a second gateelectrode terminal (not shown).

As described above, the semiconductor device 102 has a structure inwhich the IGBT region 106 functioning as a trench type IGBT and thediode region 108 functioning as a free-wheeling diode are connected inreverse parallel to each other.

An operation of the semiconductor device 102 will be described. In acase where a voltage is not applied to the gate electrodes 130 and thusthe IGBT region 106 is not driven, the IGBT region 106 functions as aparasitic diode. In this state, when a forward bias is applied betweenthe emitter/anode electrode 148 and the collector/cathode electrode 146,the emitter/anode electrode 148 and the n pillar region 142 areshort-circuited via the Schottky interface 152 in the diode region 108.The n pillar region 142 has almost the same potential as that of the nbarrier regions 122, and thus a potential difference between the nbarrier regions 122 and the emitter/anode electrode 148 is nearly thesame as voltage drop at the Schottky interface 152. Since the voltagedrop at the Schottky interface 152 is sufficiently smaller than abuilt-in voltage of a pn junction between the p anode regions 124 andthe n barrier regions 122, injection of holes into the n⁻ drift region114 from the p⁺ contact regions 144 or the p anode regions 124 issuppressed. In the IGBT region 106, the emitter/anode electrode 148 andthe n pillar region 134 are short-circuited via the Schottky interface150. The n pillar region 134 has almost the same potential as that ofthe n barrier regions 116, and thus a potential difference between the nbarrier regions 116 and the emitter/anode electrode 148 is nearly thesame as voltage drop at the Schottky interface 150. Since the voltagedrop at the Schottky interface 150 is sufficiently smaller than abuilt-in voltage of a pn junction between the p body regions 118 and then barrier regions 116, injection of holes into the n⁻ drift region 114from the p⁺ contact regions 136 or the p body regions 118 is suppressed.Between the emitter/anode electrode 148 and the collector/cathodeelectrode 146, mainly, a forward current flows via the Schottkyinterface 152, the n pillar region 142, the n barrier regions 122, then⁻ drift region 114, the n buffer region 112, and the n⁺ cathode region120 of the diode region 108 in this order, and a forward current flowsvia the Schottky interface 150, the n pillar region 134, the n barrierregions 116, the n⁻ drift region 114, the n buffer region 112, and then⁺ cathode region 120 of the IGBT region 106 in this order.

Next, when the voltage between the emitter/anode electrode 148 and thecollector/cathode electrode 146 is changed from the forward bias to areverse bias, a reverse current is restricted by the Schottky interface152 in the diode region 108, and the Schottky interface 150 in the IGBTregion 106. As described above, in the diode region 108, when theforward bias is applied, injection of holes into the n⁻ drift region 114from the p⁺ contact regions 144 and the p anode regions 124 issuppressed, and, in the IGBT region 106, when the forward bias isapplied, injection of holes into the n⁻ drift region 114 from the p⁺contact regions 136 and the p body regions 118 is suppressed. Therefore,in the semiconductor device 102, a reverse recovery current is small,and reverse recovery time is short. According to the semiconductordevice 102 of this Embodiment, it is possible to reduce the switchingloss without performing lifetime control of the n⁻ drift region 114.

In the semiconductor device 102 of this Embodiment, when the reversebias is applied between the emitter/anode electrode 148 and thecollector/cathode electrode 146, in the IGBT region 106, an electricfield is distributed to not only a depletion layer growing from theSchottky interface 150 but also depletion layers growing from theinterfaces of the pn junctions between the p body regions 118 and the nbarrier regions 116. In addition, since an electric field isconcentrated on the vicinity of the front end portions of the trenches126 of the n⁻ drift region 114, an electric field applied to theSchottky interface 150 and an electric field applied to the pn junctionsbetween the p body regions 118 and the n barrier regions 116 arereduced. Similarly, in the diode region 108, an electric field isdistributed to not only a depletion layer growing from the Schottkyinterface 152 but also depletion layers growing from the interfaces ofthe pn junctions between the p anode regions 124 and the n barrierregions 122. In addition, since an electric field is concentrated on thevicinity of the front end portions of the trenches 126 of the n driftregion 114, an electric field applied to the Schottky interface 152 andan electric field applied to the pn junctions between the p anoderegions 124 and the n barrier regions 122 are reduced. According to thesemiconductor device 102 of this Embodiment, it is possible to improvevoltage resistance to the reverse bias.

In addition, as shown in FIG. 43, in the semiconductor device 102 ofthis Embodiment, there may be a configuration in which the n barrierregions 116 and the n pillar region 134 are formed in the IGBT region106, but the n barrier regions 122 and the n pillar region 142 are notformed in the diode region 108. With this configuration as well, it ispossible to reduce the switching loss in the IGBT region 106 and tothereby improve voltage resistance to the reverse bias.

Embodiment 9

As shown in FIG. 17, a semiconductor device 162 of this Embodiment hasalmost the same configuration as that of the semiconductor device 102 ofEmbodiment 8. A semiconductor device 162 is formed using a semiconductorsubstrate 164 of silicon. The semiconductor substrate 164 has almost thesame configuration as that of the semiconductor substrate 104 ofEmbodiment 8. On the semiconductor substrate 164, in the IGBT region106, p electric field progress preventing regions 166 which are p typesemiconductor regions are formed between the n⁻ drift region 114 and then barrier regions 116, and, in the diode region 108, p electric fieldprogress preventing regions 168 which are p type semiconductor regionsare formed between the n⁻ drift region 114 and the n barrier regions122. The impurity concentration of the p electric field progresspreventing regions 166 and the p electric field progress preventingregions 168 is approximately 1×10¹⁵ to 1×10¹⁹ [cm⁻³]. In addition, eachthickness of the p electric field progress preventing regions 166 andthe p electric field progress preventing regions 168 is approximately0.5 to 3.0 [um]. In the IGBT region 106, the trenches 126 penetratethrough the n barrier regions 116 and the p electric field progresspreventing regions 166 from the upper surface of the p body regions 118and reach the inside of the n⁻ drift region 114. In the diode region108, the trench 126 penetrates through the n barrier regions 122 and thep electric field progress preventing regions 168 from the upper surfaceof the p anode regions 124 and reaches the inside of the n⁻ drift region114.

According to the semiconductor device 162 of this Embodiment, in thesame manner as the semiconductor device 102 of Embodiment 8, when theforward bias is applied between the emitter/anode electrode 148 and thecollector/cathode electrode 146, in the diode region 108, injection ofholes into the n⁻ drift region 114 from the p contact regions 144 andthe p anode regions 124 is suppressed, and, in the IGBT region 106,injection of holes into the n⁻ drift region 114 from the p⁺ contactregions 136 and the p body regions 118 is suppressed. Therefore, whenthe forward bias is changed to the reverse bias, it is possible toreduce a reverse recovery current and to thereby shorten reverserecovery time. Accordingly, it is possible to reduce the switching loss.

In the semiconductor device 162 of this Embodiment, when the reversebias is applied between the emitter/anode electrode 148 and thecollector/cathode electrode 146, in the IGBT region 106, an electricfield is distributed to not only a depletion layer growing from theSchottky interface 150 and depletion layers growing from the interfacesof the pn junctions between the p body regions 118 and the n barrierregions 116 but also depletion layers growing from the interfaces of thepn junctions between the n⁻ drift region 114 and the p electric fieldprogress preventing regions 166. In addition, since an electric field isconcentrated on the vicinity of the front end portions of the trenches126 of the n⁻ drift region 114, an electric field applied to theSchottky interface 150, an electric field applied to the pn junctionsbetween the p body regions 118 and the n barrier regions 116, and anelectric field applied to the interfaces of the pn junctions between then⁻ drift region 114 and the p electric field progress preventing regions166 are reduced. Similarly, in the diode region 108, an electric fieldis distributed to not only a depletion layer growing from the Schottkyinterface 152 and depletion layers growing from the interfaces of the pnjunctions between the p anode regions 124 and the n barrier regions 122but also depletion layers growing from the interfaces of the pnjunctions between the n⁻ drift region 114 and the p electric fieldprogress preventing regions 168. In addition, since an electric field isconcentrated on the vicinity of the front end portions of the trenches126 of the n⁻ drift region 114, an electric field applied to theSchottky interface 152, an electric field applied to the pn junctionsbetween the p anode regions 124 and the n barrier regions 122, and anelectric field applied to the pn junctions between the n⁻ drift region114 and the p electric field progress preventing regions 168 arereduced. According to the semiconductor device 162 of this Embodiment,it is possible to improve voltage resistance to the reverse bias.

In addition, according to the semiconductor device 162 of thisEmbodiment, when the reverse bias is applied between the emitter/anodeelectrode 148 and the collector/cathode electrode 146, in the dioderegion 108, a reverse current is restricted by the pn junctions betweenthe p electric field progress preventing regions 168 and the n driftregion 114, and thus a leakage current passing through the Schottkyinterface 152 is reduced, and, in the IGBT region 106, a reverse currentis restricted by the pn junctions between the p electric field progresspreventing regions 166 and the n drift region 114, a leakage currentpassing through the Schottky interface 150 is reduced. According to thesemiconductor device 162 of this Embodiment, it is possible to reduce aleakage current when the reverse bias is applied.

In addition, in the semiconductor device 162 of this Embodiment, in acase where the IGBT region 106 is driven by applying a voltage to thegate electrodes 130 of the IGBT region 106, a current flowing from thecollector/cathode electrode 146 to the emitter/anode electrode 148 issuppressed by the p electric field progress preventing regions 166 inthe IGBT region 106, and thus it is possible to reduce a saturationcurrent of the IGBT region 106.

In addition, the respective constituent elements of the semiconductordevice 162 according to this Embodiment may be disposed in athree-dimensional manner as shown in FIGS. 18 and 47. In FIGS. 18 and47, the collector/cathode electrode 146 and the emitter/anode electrode148 are not shown in order to clarify the disposition of the respectiveconstituent elements.

In addition, the respective constituent elements of the semiconductordevice 162 according to this Embodiment may be disposed in athree-dimensional manner as shown in FIGS. 48, 49 and 50. In FIGS. 48,49 and 50, the collector/cathode electrode 146 and the emitter/anodeelectrode 148 are not shown in order to clarify the disposition of therespective constituent elements. In the dispositions shown in FIGS. 48,49 and 50, when the semiconductor device 162 is in plan view from thetop surface, the gate electrodes 130 or the gate electrodes 140intersect each other longitudinally and transversely, and the p bodyregions 118 and the p anode regions 124 are disposed so as to beopposite to the inner corner portions of the gate electrodes 130, 140with the insulating films 128, 138 interposed therebetween. With thisconfiguration, when an ON current flows through the IGBT region 106 orthe diode region 108, a hole concentration of the n⁻ drift regions 114around the inner corner portions of the gate electrodes 130, 140 isincreased, and thus it is possible to improve a conductivity modulationeffect. It is possible to reduce the ON resistance of the IGBT region106 or the diode region 108.

In addition, as shown in FIG. 44, in the semiconductor device 162 ofthis Embodiment, there may be a configuration in which the p electricfield progress preventing regions 166, the n barrier regions 116, andthe n pillar region 134 are formed in the IGBT region 106, but the pelectric field progress preventing regions 168, the n barrier regions122, and the n pillar region 142 are not formed in the diode region 108.With this configuration as well, it is possible to reduce the switchingloss in the IGBT region 106 and to thereby improve voltage resistance tothe reverse bias. In addition, it is possible to reduce a leakagecurrent when the reverse bias is applied in the IGBT region 106 and tothereby reduce a saturation current.

Embodiment 10

As shown in FIG. 19, a semiconductor device 172 of this Embodiment hasalmost the same configuration as that of the semiconductor device 102 ofEmbodiment 8. The semiconductor device 172 of this Embodiment isdifferent from the semiconductor device 102 of Embodiment 8 in that aplurality of p⁺ cathode short-circuit regions 174 which are highconcentration p type semiconductor regions is formed spaced apart fromeach other with a predetermined gap in the n⁺ cathode region 120 of thediode region 108. In this Embodiment, the impurity concentration of thep⁺ cathode short-circuit regions 174 is approximately 1×10¹⁷ to 5×10²⁰[cm⁻³]. According to the semiconductor device 172 of this Embodiment,when the forward bias is applied, since injection of electrons into then⁻ drift region 114 from the n⁺ cathode region 120 is suppressed, areverse recovery current may further be reduced, and reverse recoverytime can be further shortened than in the semiconductor device 102 ofEmbodiment 8. According to the semiconductor device 172 of thisEmbodiment, it is possible to further reduce the switching loss.

Embodiment 11

As shown in FIG. 20, a semiconductor device 182 of this Embodiment hasalmost the same configuration as that of the semiconductor device 162 ofEmbodiment 9. The semiconductor device 182 of this Embodiment isdifferent from the semiconductor device 162 of Embodiment 9 in that aplurality of p⁺ cathode short-circuit regions 174 is formed spaced apartfrom each other with a predetermined gap in the n⁺ cathode region 120 ofthe diode region 108. According to the semiconductor device 182 of thisEmbodiment, when the forward bias is applied, since injection ofelectrons into the n⁻ drift region 114 from the n⁺ cathode region 120 issuppressed, a reverse recovery current may further be reduced, andreverse recovery time may be further shortened than in the semiconductordevice 162 of Embodiment 9. According to the semiconductor device 182 ofthis Embodiment, it is possible to further reduce the switching loss.

Embodiment 12

As shown in FIG. 21, a semiconductor device 202 in this Embodiment isformed using a semiconductor substrate 204 of silicon. On thesemiconductor substrate 204, an n⁺ cathode region 206 which is a highconcentration n type semiconductor region, an n buffer region 208 whichis an n type semiconductor region, and an n⁻ drift region 210 which is alow concentration n type semiconductor region are sequentiallylaminated. In this Embodiment, the impurity concentration of the n⁺cathode region 206 is approximately 1×10¹⁷ to 5×10²⁰ [cm⁻³], theimpurity concentration of the n buffer region 208 is approximately1×10¹⁶ to 1×10¹⁹ [cm⁻³], and the impurity concentration of the n⁻ driftregion 210 is approximately 1×10¹² to 1×10¹⁵ [cm⁻³].

On the upper surface of the n⁻ drift region 210, a plurality of nbarrier regions 212 which are n type semiconductor regions is formedspaced apart from each other with a predetermined gap. On the upper typesurfaces of the n barrier regions 212, p anode regions 214 which are ptype semiconductor regions are partially formed. On the upper surfacesof the p anode regions 214, n pillar regions 216 which are n typesemiconductor regions are formed. The n pillar regions 216 penetratethrough the p anode regions 214 and reach the upper surfaces of the nbarrier regions 212. In addition, on the upper surfaces of the p anoderegions 214, p⁺ contact regions 218 which are high concentration p typesemiconductor regions and n⁺ emitter regions 220 which are highconcentration n type semiconductor regions are formed. In thisEmbodiment, the impurity concentration of the n barrier regions 212 isapproximately 1×10¹⁵ to 1×10¹⁸ [cm⁻³], the impurity concentration of thep anode regions 214 is approximately 1×10¹⁶ to 1×10¹⁹ [cm⁻³], theimpurity concentration of the n pillar regions 216 is approximately1×10¹⁶ to 1×10¹⁹ [cm⁻³], the impurity concentration of the p contactregions 218 is approximately 1×10¹⁷ to 1×10²⁰ [cm⁻³], and the impurityconcentration of the n⁺ emitter regions 220 is approximately 1×10¹⁷ to1×10²⁰ [cm⁻³]. In addition, the thickness of each of the n barrierregions 212 is approximately 0.5 to 3.0 [um].

A cathode electrode 222 made of metal is formed on a lower surface ofthe semiconductor substrate 204. The cathode electrode 222 is connectedto the n⁺ cathode region 206 through an ohmic junction. Anode electrodes224 made of metal and a gate electrode 226 made of metal are formed onthe upper surface of the semiconductor substrate 204. The anodeelectrodes 224 are connected to the n pillar regions 216 throughSchottky junctions via Schottky interfaces 228. In this Embodiment, abarrier height of the Schottky junctions is approximately 0.2 to 1.0[eV]. The anode electrodes 224 are connected to the p anode regions 214,the p⁺ contact regions 218, and parts of the n⁺ emitter regions 220through ohmic junctions. The gate electrode 226 is disposed so as to beopposite to the n⁻ drift region 210, the n barrier regions 212, the panode regions 214, and parts of the n⁺ emitter regions 220 via aninsulating film 230. The gate electrode 226 is electrically connected toa gate electrode terminal (not shown).

The semiconductor device 202 according to this Embodiment has a verticalMOSFET structure which includes the cathode electrode 222 correspondingto a drain electrode, the n⁺ cathode region 206 corresponding to a drainregion, the n buffer region 208, the n⁻ drift region 210, the p anoderegions 214 corresponding to a body region, the n⁺ emitter regions 220corresponding to a source region, the anode 224 corresponding to asource electrode, and the gate electrode 226 opposite to the p anoderegions 214 between the n⁺ emitter regions 220 and the n⁻ drift region210 with the insulating films 230 interposed therebetween.

In the semiconductor device 202 of this Embodiment, the n barrierregions 212 are formed between the n⁻ drift region 210 and the p anoderegions 214, and the n barrier regions 212 are electrically connected tothe anode electrodes 224 via the n pillar regions 216 which areconnected to the anode electrodes 224 through Schottky junctions via theSchottky interfaces 228. With this configuration, reverse recoverycharacteristics are improved with respect to parasitic diodes betweenthe anode electrodes 224 and the cathode electrode 222, and thus it ispossible to reduce the switching loss. In addition, it is possible toimprove voltage resistance to a reverse bias between the anodeelectrodes 224 and the cathode electrode 222.

Embodiment 13

As shown in FIG. 22, a semiconductor device 232 of this Embodiment hasalmost the same configuration as that of the semiconductor device 202 ofEmbodiment 12. The semiconductor device 232 of this Embodiment also hasthe vertical MOSFET structure in the same manner as the semiconductordevice 202 of Embodiment 12. In the semiconductor device 232 of thisEmbodiment, p electric field progress preventing regions 234 which are ptype semiconductor regions are formed between the n⁻ drift region 210and the n barrier regions 212. The impurity concentration of the pelectric field progress preventing regions 234 is approximately 1×10¹⁵to 1×10¹⁹ [cm⁻³]. In addition, the thickness of the p electric fieldprogress preventing regions 234 is 0.5 to 3.0 [um].

According to the semiconductor device 232 of this Embodiment, in thesame manner as the semiconductor device 202 of Embodiment 12, reverserecovery characteristics are improved with respect to parasitic diodesbetween the anode electrodes 224 and the cathode electrode 222, and thusit is possible to reduce the switching loss.

In addition, in the semiconductor device 232 of this Embodiment, sincethe p electric field progress preventing regions 234 are formed betweenthe n⁻ drift region 210 and the n barrier regions 212, voltageresistance to a reverse bias between the anode electrodes 224 and thecathode electrode 222 is improved and thus a leakage current when thereverse bias is applied can be reduced as compared with thesemiconductor device 202 of Embodiment 12.

Embodiment 14

As shown in FIG. 23, a semiconductor device 242 of this Embodiment hasalmost the same configuration as that of the semiconductor device 202 ofEmbodiment 12. In the semiconductor device 242 of this Embodiment, a p⁺collector region 244 which is a high concentration p type semiconductorregion is partially formed in the n⁺ cathode region 206. In thisEmbodiment, the impurity concentration of the p⁺ collector region 244 isapproximately 1×10¹⁷ to 5×10²⁰ [cm⁻³].

The semiconductor device 242 has a structure in which a planar IGBT anda free-wheeling diode are connected in reverse parallel. In other words,the planar IGBT is constituted by the cathode electrode 222corresponding to a collector electrode, the p⁺ collector region 244, then buffer region 208, the n⁻ drift region 210, the p anode regions 214,the n⁺ emitter regions 220, the anode electrodes 224 corresponding to aemitter electrode, the insulating film 230, and the gate electrode 226.The free-wheeling diode is constituted by the cathode electrode 222, then⁺ cathode region 206, the n buffer region 208, the n⁻ drift region 210,the p anode regions 214, the p⁺ contact regions 218, and the anodeelectrodes 224. In the above-described IGBT and diode, the semiconductordevice 242 of this Embodiment has a configuration in which there arefurther provided the n barrier regions 212 formed between the n⁻ driftregion 210 and the p anode regions 214, and the n pillar regions 216which are formed so as to connect the n barrier regions 212 to the anodeelectrodes 224 and connected to the anode electrodes 224 throughSchottky junctions.

In the semiconductor device 242 of this Embodiment, when a forward biasis applied between the anode electrodes 224 and the cathode electrode222, injection of holes into the n⁻ drift region 210 from the p anoderegions 214 and the p⁺ contact regions 218 is suppressed. Therefore,reverse recovery characteristics are improved and thereby it is possibleto reduce the switching loss.

In the semiconductor device 242 of this Embodiment, when the reversebias is applied between the anode electrodes 224 and the cathodeelectrode 222, an electric field is distributed to not only depletionlayers growing from the Schottky interfaces 228 but also depletionlayers growing from the interfaces of the pn junctions between the panode regions 214 and the n barrier regions 212. Therefore, it ispossible to improve voltage resistance to the reverse bias.

Embodiment 15

As shown in FIG. 24, a semiconductor device 252 of this Embodiment hasalmost the same configuration as that of the semiconductor device 242 ofEmbodiment 14. In the semiconductor device 252 of this Embodiment, pelectric field progress preventing regions 234 which are p typesemiconductor regions are formed between the n⁻ drift region 210 and then barrier regions 212. The impurity concentration of the p electricfield progress preventing regions 234 is approximately 1×10¹⁵ to 1×10¹⁹[cm⁻³]. In addition, the thickness of the p electric field progresspreventing regions 234 is 0.5 to 3.0 [um]. The semiconductor device 252has a structure in which a planar IGBT and a free-wheeling diode areconnected in reverse parallel.

In the semiconductor device 252 of this Embodiment, when a forward biasis applied between the anode electrodes 224 and the cathode electrode222, injection of holes into the n drift region 210 from the p anoderegions 214 and the p contact regions 218 is suppressed. Therefore,reverse recovery characteristics are improved and thereby it is possibleto reduce the switching loss.

In the semiconductor device 252 of this Embodiment, when the reversebias is applied between the anode electrodes 224 and the cathodeelectrode 222, an electric field is distributed to not only depletionlayers growing from the Schottky interfaces 228 and depletion layersgrowing from interfaces of pn junctions between the p anode regions 214and the n barrier regions 212 but also depletion layers growing from theinterfaces of the pn junctions between the p electric field progresspreventing regions 234 and the n⁻ drift region 210. Therefore, it ispossible to improve voltage resistance to the reverse bias.

In addition, in the semiconductor device 252 of this Embodiment, areverse current is restricted by the pn junctions between the p electricfield progress preventing regions 234 and the n⁻ drift region 210.Therefore, a leakage current passing through the Schottky interfaces 228is reduced.

In addition, in the semiconductor device 252 of this Embodiment, in acase where the IGBT is driven by applying a voltage to the gateelectrodes 226, a current flowing from the cathode electrode 222corresponding to a collector electrode to the anode electrodes 224corresponding to emitter electrodes is suppressed by the p electricfield progress preventing regions 234, and thus it is possible to reducea saturation current of the IGBT.

Embodiment 16

As shown in FIG. 25, a diode 302 of this Embodiment has almost the sameconfiguration as that of the diode 2 of Embodiment 1. The diode 302 ofthis Embodiment includes pillar electrodes 16 a made of metal instead ofthe n pillar regions 16. The pillar electrodes 16 a are formed byforming trenches on the upper surface of the semiconductor substrate 4which penetrate through the p anode regions 14 and reach the n barrierregion 12 and by filling the trenches with metal. The pillar electrodes16 a are electrically connected to the anode electrode 22 and connectedto the n barrier region 12 through Schottky junctions via Schottkyinterfaces 24 a.

In the diode 302 of this Embodiment, when a forward bias is appliedbetween the anode electrode 22 and the cathode electrode 20, the pillarelectrodes 16 a and the n barrier region 12 are short-circuited via theSchottky interfaces 24 a. At this time, a potential difference betweenthe n barrier region 12 and the anode electrode 22 is nearly the same asvoltage drop at the Schottky interfaces 24 a. Since the voltage drop atthe Schottky interfaces 24 a is sufficiently smaller than a built-involtage of a pn junction between the p anode regions 14 and the nbarrier region 12, injection of holes into the n⁻ drift region 10 fromthe p⁺ contact regions 18 or the p anode regions 14 is suppressed.

Next, when the voltage between the anode electrode 22 and the cathodeelectrode 20 is changed from the forward bias to a reverse bias, areverse current is restricted by the Schottky interfaces 24 a betweenthe pillar electrodes 16 a and the n barrier region 12. In the diode 302according to this Embodiment, since injection of holes into the n⁻ driftregion 10 from the p⁺ contact regions 18 and the p anode regions 14 issuppressed when the forward bias is applied, a reverse recovery currentis small, and reverse recovery time is short. According to the diode 302of this Embodiment, it is possible to reduce the switching loss withoutperforming lifetime control of the n⁻ drift region 10.

In the diode 302 of this Embodiment, when the reverse bias is appliedbetween the anode electrode 22 and the cathode electrode 20, an electricfield is distributed to not only depletion layers growing from theSchottky interfaces 24 a between the n barrier region 12 and the pillarelectrodes 16 a but also depletion layers growing from the interfaces ofthe pn junctions between the p anode regions 14 and the n barrier region12. Thereby, an electric field applied to the Schottky interfaces 24 abetween the n barrier region 12 and the pillar electrodes 16 a isreduced. According to the diode 302 of this Embodiment, it is possibleto improve voltage resistance to the reverse bias.

In the diode 302 of this Embodiment, a potential difference between then barrier region 12 and the anode electrode 22 when the forward bias isapplied can be made to be smaller than that in the diode 2 ofEmbodiment 1. The injection of holes into the n⁻ drift region 10 fromthe p⁺ contact regions 18 or the p anode regions 14 is furthersuppressed, and thus it is possible to further reduce the switchingloss.

Embodiment 17

As shown in FIG. 26, a diode 304 of this Embodiment has almost the sameconfiguration as that of the diode 32 of Embodiment 2. The diode 304 ofthis Embodiment includes pillar electrodes 16 a made of metal instead ofthe n pillar regions 16. The pillar electrodes 16 a are formed byforming trenches on the upper surface of the semiconductor substrate 34which penetrate through the p anode regions 14 and reach the n barrierregion 12 and by filling the trenches with metal. The pillar electrodes16 a are electrically connected to the anode electrode 22 and connectedto the n barrier region 12 through Schottky junctions via Schottkyinterfaces 24 a.

An operation of the diode 304 will be described. When a forward bias isapplied between the anode electrode 22 and the cathode electrode 20, thepillar electrodes 16 a and the n barrier region 12 are short-circuitedvia the Schottky interfaces 24 a. At this time, a potential differencebetween the n barrier region 12 and the anode electrode 22 is nearly thesame as voltage drop at the Schottky interfaces 24 a. Since the voltagedrop at the Schottky interfaces 24 a is sufficiently smaller than abuilt-in voltage of a pn junction between the p anode regions 14 and then barrier region 12, injection of holes into the n⁻ drift region 10 fromthe p⁺ contact regions 18 or the p anode regions 14 is suppressed. Inaddition, although there is a pn junction between the n barrier region12 and the p electric field progress preventing region 36, since a ptype impurity concentration of the p electric field progress preventingregion 36 is low and the thickness of the p electric field progresspreventing region 36 is small, the pn junction has less influence on aforward current between the anode electrode 22 and the cathode electrode20.

Next, when the voltage between the anode electrode 22 and the cathodeelectrode 20 is changed from the forward bias to a reverse bias, areverse current is restricted by the Schottky interfaces 24 a betweenthe pillar electrodes 16 a and the n barrier region 12. In addition, thereverse current is also restricted by a pn junction between the n⁻ driftregion 10 and the p electric field progress preventing region 36. Asdescribed above, in the diode 304 according to this Embodiment, sinceinjection of holes into the n⁻ drift region 10 from the p⁺ contactregions 18 and the p anode regions 14 is suppressed when the forwardbias is applied, a reverse recovery current is small, and reverserecovery time is short. According to the diode 304 of this Embodiment,it is possible to reduce the switching loss without performing lifetimecontrol of the n⁻ drift region 10.

In the diode 304 of this Embodiment, when the reverse bias is appliedbetween the anode electrode 22 and the cathode electrode 20, an electricfield is distributed to not only depletion layers growing from theSchottky interfaces 24 a between the n barrier region 12 and the pillarelectrodes 16 a and depletion layers growing from the interfaces of thepn junctions between the p anode regions 14 and the n barrier region 12but also an interface of the pn junction between the n⁻ drift region 10and the p electric field progress preventing region 36. Thereby, anelectric field applied to the Schottky interfaces 24 a between the nbarrier region 12 and the pillar electrodes 16 a and an electric fieldapplied to the pn junction between the p anode regions 14 and the nbarrier region 12 are reduced. According to the diode 304 of thisEmbodiment, it is possible to improve voltage resistance to the reversebias.

In the diode 304 of this Embodiment, a potential difference between then barrier region 12 and the anode electrode 22 when the forward bias isapplied can be made to be smaller than that in the diode 32 ofEmbodiment 2. The injection of holes into the n⁻ drift region 10 fromthe p⁺ contact regions 18 or the p anode regions 14 is furthersuppressed, and thus it is possible to further reduce the switchingloss.

Other Embodiments

The diode 42 shown in FIG. 7, the diode 52 shown in FIG. 8, the diode 62shown in FIG. 10, the diode 66 shown in FIG. 11, the diode 68 shown inFIG. 12, and the diode 70 shown in FIG. 13 may be respectivelyconfigured as a diode 306 shown in FIG. 27, a diode 308 shown in FIG.28, a diode 310 shown in FIG. 29, a diode 312 shown in FIG. 30, a diode314 shown in FIG. 31, and a diode 316 shown in FIG. 32, by replacing then pillar regions 16 with the above-described pillar electrodes 16 a.

In addition, the semiconductor device 72 shown in FIG. 14 and thesemiconductor device 82 shown in FIG. 15 may be respectively configuredas in a semiconductor device 318 shown in FIG. 33 and a semiconductordevice 320 shown in FIG. 34, by replacing the n pillar regions 16 withthe pillar electrodes 16 a.

Further, the semiconductor device 102 shown in FIGS. 16 and 43, thesemiconductor device 162 shown in FIGS. 17 and 44, the semiconductordevice 172 shown in FIG. 19, and the semiconductor device 182 shown inFIG. 20 may be respectively configured as in a semiconductor device 322shown in FIGS. 35 and 45, a semiconductor device 324 shown in FIGS. 36and 46, a semiconductor device 326 shown in FIG. 37, and a semiconductordevice 328 shown in FIG. 38, by replacing the n pillar region 134 and142 with pillar electrodes 134 a and 142 a made of metal. The pillarelectrodes 134 a are electrically connected to the emitter/anodeelectrode 148, penetrate through the p body regions 118, and areconnected to the n barrier regions 116 through Schottky junctions viaSchottky interfaces 150 a. The pillar electrodes 142 a are electricallyconnected to the emitter/anode electrode 148, penetrate through the panode regions 124, and are connected to the n barrier regions 122through Schottky junctions via Schottky interfaces 152 a.

In addition, the semiconductor device 202 shown in FIG. 21, thesemiconductor device 232 shown in FIG. 22, the semiconductor device 242shown in FIG. 23, and the semiconductor device 252 shown in FIG. 24 maybe respectively configured as in a semiconductor device 330 shown inFIG. 39, a semiconductor device 332 shown in FIG. 40, a semiconductordevice 334 shown in FIG. 41, and a semiconductor device 336 shown inFIG. 42, by replacing the n pillar regions 216 with pillar electrodes216 a made of metal. Here, the pillar electrodes 216 a are electricallyconnected to the anode electrodes 224, penetrate through the p anoderegions 214, and are connected to the n barrier regions 212 throughSchottky junctions via Schottky interfaces 228 a.

As above, although Embodiments of the present invention have beendescribed in detail, they are only an example and do not limit the scopeof the claims. The techniques recited in the claims include variousmodifications and changes of the above-described detailed examples.

For example, although, in the above Embodiments, the case of usingsilicon as a semiconductor material has been described, the presentinvention may be also applied to cases of using semiconductor materialssuch as silicon carbide, gallium nitride, and gallium arsenide.

The technical elements described in the specification or the drawingsshow technical usefulness singly or through a variety of combinationsand thus are not limited to the combinations recited in the claims atthe time of filing the present application. In addition, the techniquesexemplified in the present specification or the drawings can achieve aplurality of objects at a time, and have technical usefulness as long asany one of the objects is achieved.

1. A MOSFET comprising: a drain electrode; a drain region made of afirst conductivity type semiconductor, a drift region made of a lowconcentration first conductivity type semiconductor; a body region madeof a second conductivity type semiconductor; a source region made of thefirst conductivity type semiconductor; a source electrode made of metal;a gate electrode opposite to the body region between the source regionand the drift region via an insulating film; a barrier region formedbetween the drift region and the body region and made of a firstconductivity type semiconductor having a concentration higher than thatof the drift region; and a pillar region formed so as to connect thebarrier region to the source electrode and made of a first conductivitytype semiconductor having a concentration higher than that of thebarrier region, wherein the pillar region and the source electrode areconnected through a Schottky junction.
 2. The MOSFET according to claim1, further comprising an electric field progress preventing regionformed between the barrier region and the drift region and made of thesecond conductivity type semiconductor.
 3. A diode comprising: a cathodeelectrode; a cathode region made of a first conductivity typesemiconductor; a drift region made of a low concentration firstconductivity type semiconductor; an anode region made of a secondconductivity type semiconductor; an anode electrode; a barrier regionformed between the drift region and the anode region and made of a firstconductivity type semiconductor having a concentration higher than thatof the drift region; and a pillar electrode formed so as to connect thebarrier region to the anode electrode and made of metal, wherein thebarrier region and the pillar electrode are connected through a Schottkyjunction.
 4. The diode according to claim 3, further comprising anelectric field progress preventing region formed between the barrierregion and the drift region and made of the second conductivity typesemiconductor.
 5. The diode according to claim 3, wherein a trenchextending from the anode region to the drift region is formed, and atrench electrode which is coated with an insulating film is formedinside the trench.
 6. The diode according to claim 3, further comprisinga cathode short-circuit region partially formed in the cathode regionand made of the second conductivity type semiconductor.
 7. Asemiconductor device comprising the diode according to claim 9 and anIGBT that are integrally formed, wherein the IGBT includes: a collectorelectrode; a collector region made of the second conductivity typesemiconductor; a second drift region continuously formed from the driftregion and made of a low concentration first conductivity typesemiconductor; a body region made of the second conductivity typesemiconductor; an emitter region made of the first conductivity typesemiconductor; an emitter electrode; a gate electrode opposite to thebody region between the emitter region and the second drift region viaan insulating film; a second barrier region formed between the seconddrift region and the body region and made of a first conductivity typesemiconductor having a concentration higher than that of the seconddrift region; and a second pillar electrode formed so as to connect thesecond barrier region to the emitter electrode and made of metal, andwherein the second barrier region and the second pillar electrode areconnected through a Schottky junction.
 8. The semiconductor deviceaccording to claim 7, further comprising a second electric fieldprogress preventing region formed between the second barrier region andthe second drift region and made of the second conductivity typesemiconductor.
 9. A MOSFET comprising: a drain electrode; a drain regionmade of a first conductivity type semiconductor; a drift region made ofa low concentration first conductivity type semiconductor; a body regionmade of a second conductivity type semiconductor; a source region madeof the first conductivity type semiconductor; a source electrode; a gateelectrode opposite to the body region between the source region and thedrift region via an insulating film; a barrier region formed between thedrift region and the body region and made of a first conductivity typesemiconductor having a concentration higher than that of the driftregion; and a pillar electrode formed so as to connect the barrierregion to the source electrode and made of metal, wherein the barrierregion and the pillar electrode are connected through a Schottkyjunction.
 10. The MOSFET according to claim 9, further comprising anelectric field progress preventing region formed between the barrierregion and the drift region and made of the second conductivity typesemiconductor.